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STP80NE03L Datasheet(PDF) 1 Page - STMicroelectronics |
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STP80NE03L Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  STP80NE03L-06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ™ ” POWER MOSFET s TYPICAL RDS(on) = 0.005 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s LOW GATE CHARGE 100 oC s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size ™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. ) ® INTERNAL SCHEMATIC DIAGRAM February 2000 1 2 3 TO-220 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it VDS Drain-source Voltage (VGS =0) 30 V VDGR Drain- gate Voltage (RGS =20 k Ω)30 V VGS G ate-source Volt age ± 22 V ID Drain Current (continuous) at Tc =25 oC80 A ID Drain Current (continuous) at Tc =100 oC60 A IDM ( •) Drain Current (pulsed) 320 A Ptot T otal Dissipat ion at Tc =25 oC 150 W Derating Factor 1 W / o C dv/dt Peak Diode Recovery voltage slope 7 V/ns Tstg Storage Temperature -65 to 175 o C Tj Max. Operating Junction Temperature 175 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX T YPE VDSS RDS(on) ID STP80NE03L-06 30 V < 0. 006 Ω 80 A 1/8 |
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