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STPS20L15G Datasheet(PDF) 2 Page - STMicroelectronics

Part # STPS20L15G
Description  LOW DROP OR-ing POWER SCHOTTKY DIODE
PDF  5 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS20L15G Datasheet(HTML) 2 Page - STMicroelectronics

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Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
1.6
°C/W
THERMAL RESISTANCES
Symbol
Tests Conditions
Tests Conditions
Min.
Typ.
Max.
Unit
IR *
Reverse leakage
current
Tj = 25
°CVR = 15V
6
mA
Tj = 100
°CVR = 15V
200
500
VF *
Forward voltage drop
Tj = 25
°CIF = 19 A
0.41
V
Tj = 25
°CIF = 40 A
0.52
Tj = 125
°CIF = 19 A
0.28
0.33
Tj = 125
°CIF = 40 A
0.42
0.50
Pulse test :
* tp = 380
µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.18 x IF(AV) + 8.10
-3 x IF2(RMS)
STATIC ELECTRICAL CHARACTERISTICS
0
2
4
6
8
1012
1416182022
0
1
2
3
4
5
6
7
8
PF(av)(W)
IF(av) (A)
δ = 1
δ = 0.5
δ = 0.2
δ = 0.1
δ = 0.05
T
δ=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current.
0
25
50
75
100
125
0
2
4
6
8
10
12
14
16
18
20
22
IF(av)(A)
Tamb(°C)
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j -c)
Rth(j-a)=35°C/W
T
δ=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
δ = 1).
1E-3
1E-2
1E-1
1E+0
0
50
100
150
200
250
IM(A)
t(s)
IM
t
δ=0.5
Tc=50°C
Tc=75°C
Tc=110°C
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values).
1.0E-4
1.0E-3
1.0E-2
1.0E-1
1.0E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp (s)
Zth(j-c)/Rth(j-c)
T
δ=tp/T
tp
Single pulse
δ = 0.5
δ = 0.2
δ = 0.1
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
STPS20L15D/G
2/5



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