STP20NM50FD datasheet(3/16 Pages) STMICROELECTRONICS

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STB20NM50FD - STF20NM50FD - STP20NM50FD

Electrical ratings

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Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

D²PAK

TO-220

TO-220FP

VDS

Drain-source voltage (VGS=0)

500

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

20 (1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100 °C

14(1)

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

80(1)

PTOT

Total dissipation at TC = 25 °C

192

dv/dt (3)

ISD ≤ 20 A, di/dt ≤ 200 A/µs, VDD = 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink

(t=1 s;TC=25 °C)

2500

Tstg

Storage temperature

-65 to 150

°C

Operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

TO-220

D²PAK

TO-220FP

Unit

Rthj-case

Thermal resistance junction-case max

0.65

2.8

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.5

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

°C/W

Maximum lead temperature for

soldering purposes

300

°C

Table 4.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAS, VDD = 35 V)

700

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