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STPS80H100TV Datasheet(PDF) 2 Page - STMicroelectronics

Part # STPS80H100TV
Description  HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
PDF  4 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS80H100TV Datasheet(HTML) 2 Page - STMicroelectronics

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Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to case
Per leg
1
°C/W
Total
0.55
Rth (c)
Coupling
0.1
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
IR *
Reverse leakage current
Tj = 25
°CVR =VRRM
20
µA
Tj = 125
°C
7
25
mA
VF **
Forward voltage drop
Tj = 25
°CIF = 40 A
0.78
V
Tj = 125
°CIF = 40 A
0.61
0.65
Tj = 25
°CIF = 80 A
0.89
Tj = 125
°CIF = 80 A
0.7
0.74
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
* tp = 5 ms,
δ <2%
** tp = 380
µs, δ <2%
To evaluate the maximum conduction losses use the following equation :
P = 0.56 x IF(AV) + 0.0022 x IF
2
(RMS)
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
IF(av) (A)
PF(av)(W)
δ = 0.2
δ = 0.5
δ =1
δ = 0.05
δ = 0.1
T
δ=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
45
50
Tamb(
°C)
IF(av)(A)
Rth(j-a)=5
°C/W
Rth(j-a)=Rth(j-c)
T
δ=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
δ=0.5, per diode).
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1)x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STPS80H100TV
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