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STTA9012TV2 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STTA9012TV2
Description  TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTA9012TV2 Datasheet(HTML) 2 Page - STMicroelectronics

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Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
VF *
Forward voltage drop
IF =45A
Tj = 25
°C
Tj = 125
°C
1.3
2.05
1.85
V
IR **
Reverse leakage current
VR =0.8 x
VRRM
Tj = 25
°C
Tj = 125
°C3
200
12
µA
mA
Vto
Threshold voltage
Ip < 3.IAV
Tj = 125
°C
1.57
V
Rd
Dynamic resistance
6
m
Ω
Test pulses :
* tp = 380
µs, δ <2%
** tp = 5 ms ,
δ <2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Test conditions
Value
Unit
Rth(j-c)
Junction to case thermal resistance
Per diode
0.85
°C/W
Total
0.48
Coupling
0.1
P1
Conduction power dissipation
IF(AV) = 45A
δ =0.5
Tc= 70
°C
94
W
Pmax
Total power dissipation
Pmax = P1 + P3
(P3 = 10% P1)
Tc= 62
°C
104
W
THERMAL AND POWER DATA (per diode)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
trr
Reverse recovery
time
Tj = 25
°C
IF = 0.5 A
IR = 1A
Irr = 0.25A
IF =1 A dIF/dt =-50A/
µsVR =30V
65
115
ns
IRM
Maximum reverse
recovery current
Tj = 125
°C VR = 600V IF =45A
dIF/dt = -360 A/
µs
dIF/dt = -500 A/
µs50
60
A
S factor
Softness factor
Tj = 125
°CVR = 600V IF =45A
dIF/dt = -500 A/
µs
1.2
-
DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
tfr
Forward recovery time
Tj = 25
°C
IF =45 A, dIF/dt = 360 A/
µs
measured at 1.1
× VFmax
900
ns
VFp
Peak forward voltage
Tj = 25
°C
IF =45A, dIF/dt = 360 A/
µs
IF =45A, dIF/dt = 500 A/
µs30
30
V
TURN-ON SWITCHING
To evaluate the maximum conduction losses use the following equation :
P= Vto xIF(AV) +rd x IF
2
(RMS)
STTA9012TV1/2
2/8



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