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STU70N2LH5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STU70N2LH5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() Preliminary Data This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. September 2008 Rev 2 1/12 12 STD70N2LH5 STU70N2LH5 N-channel 25 V, 0.006 Ω, 48 A - DPAK - IPAK STripFET™ V Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STD70N2LH5 25 V 0.0071 Ω 48 A STU70N2LH5 25 V 0.0075 Ω 48 A DPAK 1 3 3 2 1 IPAK Table 1. Device summary Order codes Marking Package Packaging STD70N2LH5 70N2LH5 DPAK Tape & reel STU70N2LH5 70N2LH5 IPAK Tube www.st.com |
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