BUX11 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUX11

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.2A; IB= 0

200

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 6A; IB= 0.6A

0.6

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 12A ;IB= 1.5A

1.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= 12A ;IB= 1.5A

1.5

ICEO

Collector Cutoff Current

VCE= 160V; IB= 0

1.5

ICEX

Collector Cutoff Current

VCE= 250V;VBE= -1.5V

VCE= 250V;VBE= -1.5V;TC=125℃

1.5

6.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

1.0

hFE-1

DC Current Gain

IC= 6A; VCE= 2V

hFE-2

DC Current Gain

IC= 12A; VCE= 4V

Current-Gain—Bandwidth Product

IC= 1A; VCE= 15V, ftest= 10MHz

MHz

Switching Times

ton

Turn-on Time

IC= 12A; IB1= 1.5A; VCC= 150V

1.0

μs

Storage Time

1.8

μs

Fall Time

IC= 12A; IB1= -IB2= 1.5A;

VCC= 150V

0.4

μs

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