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BFS67 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BFS67 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFS67 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.01 μA hFE-1 DC Current Gain IC= 2mA ; VCE= 1V 25 hFE-2 DC Current Gain IC= 25mA ; VCE= 1V 25 fT Current-Gain—Bandwidth Product IC= 2mA ; VCE= 5V; f= 500MHz 1 GHz fT Current-Gain—Bandwidth Product IC= 25mA ; VCE= 5V; f= 500MHz 1.6 GHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1MHz 0.8 1.5 pF Cre Feedback Capacitance IC= 1mA ; VCB= 5V; f= 1MHz 0.65 pF NF Noise Figure IC= 2mA ; VCE= 5V;RS= 50Ω f= 500MHz 4.5 dB isc Website：www.iscsemi.cn 2 |
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