2SA1741 datasheet(2/3 Pages) ISC

2 / 3 page

INCHANGE Semiconductor

Product Specification

Silicon PNP Power Transistor

2SA1741

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -3.0A ; IB= -0.3A, L= 1mH

-60

VCEX(SUS)

Collector-Emitter Sustaining Voltage

IC= -3.0A ; IB1=-IB2= -0.3A,

VBE(OFF)=1.5V, L=180μH,clamped

-60

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -3A; IB= -0.15A

-0.3

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= -4A; IB= -0.2A

-0.5

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= -3A; IB= -0.15A

-1.2

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= -4A; IB= -0.2A

-1.5

ICBO

Collector Cutoff Current

VCB= -60V ; IE=0

-10

μA

ICER

Collector Cutoff Current

VCE= -60V ; RBE= 50Ω,Ta=125℃

-1.0

ICEX

Collector Cutoff Current

VCE= -60V; VBE(off)= -1.5V

VCE= -60V; VBE(off)= -1.5V,Ta=125℃

-10

-1.0

μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-10

μA

hFE-1

DC Current Gain

IC= -0.5A ; VCE= -2V

100

hFE-2

DC Current Gain

IC= -1.0A ; VCE= -2V

100

400

hFE-3

DC Current Gain

IC= -3.0A ; VCE= -2V

COB

Output Capacitance

IE=0 ; VCB= -10V;f= 1.0MHz

130

Current-Gain—Bandwidth Product

IC=-0.5A ; VCE= -10V

MHz

Switching times

ton

Turn-on Time

0.3

μs

tstg

Storage Time

1.5

μs

Fall Time

IC= -3.0A ,RL= 17Ω,

IB1= -IB2= -0.15A,VCC≈-50V

0.3

μs

hFE-2 Classifications

100-200

150-300

200-400

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