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2SD868 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD868 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD868 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200m A;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2 A;IB=0.6 A B 8.0 V VBEsat Base-emitter saturation voltage IC=2 A;IB=0.6 A B 1.5 V ICBO Collector cut-off current VCB=500V;IE=0 10 μA hFE DC current gain IC=0.5A ; VCE=5V 8 VF Diode forward voltage IF=2.5A 2.0 V fT Transition frequency IC=0.1A ; VCE=10V; f=1MHz 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 100 pF tf Fall time IC=2A;IB1end=0.6A 1.0 μs 2 |
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