ST9435AS8RG datasheet(3/7 Pages) STANSON

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ST9435A

P Channel Enhancement Mode MOSFET

5.6A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST9435A 2007. V1

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Static

Drain-Source

Breakdown Voltage

V(BR)DSS

VGS=0V,ID=-250uA

-30

Gate Threshold

Voltage

VGS(th)

VDS=VGS,ID=-

250uA

-1.0

-3.0

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

±100

VDS=-24V,VGS=0V

-1

Zero Gate Voltage

Drain Current

IDSS

VDS=-24V,VGS=0V

TJ=85℃

-5

On-State Drain

Current

ID(on)

VDS=-5V,VGS=-4.5V

-10

Drain-source On-

Resistance

RDS(on)

VGS=-10V,ID=-5.6A

VGS=-6.0V,ID=-5.0A

VGS=-4.5V,ID=-4.4A

0.057

0.072

0.095

Forward

Transconductance

gfs

VDS=-15V,ID=-5.7V

Diode Forward Voltage

VSD

IS=-2.3A,VGS=0V

-0.8

-1.2

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

2.3

Gate-Drain Charge

Qgd

VDS=-15V,VGS=-10V

ID≡-3.5A

4.5

Input Capacitance

Ciss

680

Output Capacitance

Coss

120

Reverse

TransferCapacitance

Crss

VDS ==-15V,VGS=0V

f=1MHz

Turn-On Time

td(on)

Turn-Off Time

td(off)

VDD=-15V,RL=15Ω

ID=-1A,VGEN=-10V

RG=6Ω

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