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HCR22-8 Datasheet(PDF) 2 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

Part # HCR22-8
Description  Silicon Controlled Rectifier
PDF  3 Pages
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Manufacturer  HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
Direct Link  http://www.huashan.com.cn
Logo HUASHAN - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

HCR22-8 Datasheet(HTML) 2 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

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Shantou Huashan Electronic Devices Co.,Ltd.
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Electrical Characteristics（Ta=25℃ unless otherwise specified）
Symbol
Items
Min.
Typ.
Max.
Unit
Conditions
IDRM
Repetitive Peak Off-State
Current
10
200
uA
VAK=VDRM
Ta=25℃
Ta=125℃
VTM
Peak On-State Voltage (1)
1.2
1.7
V
ITM=3A,PEAK
IGT
Gate Trigger Current（2）
200
500
uA
VAK =6V(DC), RL=100 ohm
Ta=25℃
Ta= -40℃
VGT
Gate Trigger Voltage (2)
0.8
1.2
V
VAK =7V(DC), RL=100 ohm
Ta=25℃
Ta= -40℃
VGD
Non-Trigger Gate Voltage
0.2
V
VAK =12V, RL=100 ohm
Ta=125℃
IH
Holding Current
2.0
5.0
10
mA
IT=100mA,Gate open,
Ta=25℃
Ta= -40℃
Rth(j-c)
Thermal Resistance
50
℃
/W
Junction to Case
Rth(j-a)
Thermal Resistance
160
℃
/W
Junction to Ambient
dv/dt
Critical Rate of Rise Off-state
Voltage
200
V/µs
VD=VDRM67% exponential
Waveform Rjk=1Kohm Tj=125℃
1. Forward current applied for 1 ms maximum duration,duty cycle ≤1%.
2. RGK current is not included in measurement.
█
Performance Curves
FIGURE 1 – Gate Characteristics
FIGURE 2 – Maximum CaseTemperture
Gate Current (mA)
Average On-State Current (mA)
HCR22-8



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