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APTGF200A120D3G Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APTGF200A120D3G
Description  Phase leg NPT IGBT Power Module
PDF  5 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF200A120D3G Datasheet(HTML) 1 Page - Microsemi Corporation

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APTGF200A120D3G
www.microsemi.com
1- 5
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
V
TC = 25°C
300
IC
Continuous Collector Current
TC = 80°C
200
ICM
Pulsed Collector Current
TC = 25°C
400
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
1400
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
400A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
2
1
3
5
Q2
7
6
Q1
4
VCES = 1200V
IC = 200A @ Tc = 80°C
Application
•
Welding converters
•
Switched Mode Power Supplies
•
Uninterruptible Power Supplies
•
Motor control
Features
•
Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
•
Kelvin emitter for easy drive
•
High level of integration
•
M6 power connectors
Benefits
•
Stable temperature behavior
•
Very rugged
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Easy paralleling due to positive TC of VCEsat
•
RoHS Compliant
Phase leg
NPT IGBT Power Module


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