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APTM120DA68T1G Datasheet(PDF) 5 Page - Microsemi Corporation

Part # APTM120DA68T1G
Description  Boost chopper MOSFET Power Module
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120DA68T1G Datasheet(HTML) 5 Page - Microsemi Corporation

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APTM120DA68T1G
www.microsemi.com
5 – 5
Typical Diode Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=125°C
0
20
40
60
80
0.0
1.0
2.0
3.0
4.0
VF, Anode to Cathode Voltage (V)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
15 A
30 A
45 A
0
100
200
300
400
500
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
TJ=125°C
VR=800V
QRR vs. Current Rate Charge
15 A
30 A
45 A
0
1
2
3
4
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
TJ=125°C
VR=800V
IRRM vs. Current Rate of Charge
15 A
30 A
45 A
0
5
10
15
20
25
30
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
TJ=125°C
VR=800V
Capacitance vs. Reverse Voltage
0
40
80
120
160
200
1
10
100
1000
VR, Reverse Voltage (V)
0
10
20
30
40
50
25
50
75
100
125
150
175
Case Temperature (ºC)
Max. Average Forward Current vs. Case Temp.
Duty Cycle = 0.5
TJ=175°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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