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HFS4N50 Datasheet(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS4N50 Datasheet(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() ◎ SEMIHOW REV.A0,July 2005 I D, Drain Current [A] V SD, Source-Drain Voltage [V] V GS, Gate-Source Voltage [V] V DS, Drain-Source Voltage [V] Typical Characteristics 10 -1 10 0 10 1 0 100 200 300 400 500 600 700 800 900 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd ※ Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 V DS = 250V V DS = 100V V DS = 400V ※ Note : I D = 3.4A Q G, Total Gate Charge [nC] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics |
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