FK30SM-6 datasheet(2/5 Pages) MITSUBISHI

2 / 5 page

Feb.1999

µA

Ω

°C/W

300

±30

—

0.110

1.65

2850

580

110

120

330

120

1.5

—

±10

0.143

2.15

—

2.0

0.45

150

ID = 1mA, VGS = 0V

IG =

±100µA, VDS = 0V

VGS =

±25V, VDS = 0V

VDS = 300V, VGS = 0V

ID = 1mA, VDS = 10V

ID = 15A, VGS = 10V

ID = 15A, VDS = 10V

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 150V, ID = 15A, VGS = 10V, RGEN = RGS = 50

Ω

IS = 15A, VGS = 0V

Channel to case

IS = 30A, dis/dt = –100A/

µs

V (BR) DSS

V (BR) GSS

IGSS

IDSS

VGS (th)

rDS (ON)

VDS (ON)

yfs

Ciss

Coss

Crss

td (on)

td (off)

VSD

Rth (ch-c)

trr

MITSUBISHI Nch POWER MOSFET

FK30SM-6

HIGH-SPEED SWITCHING USE

102

101

100

23 5 7 101

100

23 5 7 102 23 5 7 103

tw=100µs

1ms

10ms

100ms

TC = 25°C

Single Pulse

300

250

200

150

100

200

150

100

POWER DISSIPATION DERATING CURVE

CASE TEMPERATURE TC (°C)

MAXIMUM SAFE OPERATING AREA

DRAIN-SOURCE VOLTAGE VDS (V)

ELECTRICAL CHARACTERISTICS (Tch = 25

°C)

Drain-source breakdown voltage

Gate-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Reverse recovery time

Symbol

Unit

Parameter

Test conditions

Limits

Min.

Typ.

Max.

PERFORMANCE CURVES

FK30SM-6 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

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