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MCP1826-1802E/DC Datasheet(PDF) 20 Page - Microchip Technology

Part # MCP1826-1802E/DC
Description  1000 mA, Low Voltage, Low Quiescent Current LDO Regulator
PDF  36 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP1826-1802E/DC Datasheet(HTML) 20 Page - Microchip Technology

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MCP1826/MCP1826S
DS22057A-page 20
© 2007 Microchip Technology Inc.
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. Equation 5-4 can be
used to determine the package maximum internal
power dissipation.
EQUATION 5-4:
EQUATION 5-5:
EQUATION 5-6:
5.3
Typical Application
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
is calculated in the following example. The power
dissipation as a result of ground current is small
enough to be neglected.
5.3.1
POWER DISSIPATION EXAMPLE
5.3.1.1
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction-to-ambient for the application. The
thermal resistance from junction-to-ambient (R
θJA) is
derived from EIA/JEDEC standards for measuring
thermal resistance. The EIA/JEDEC specification is
JESD51. The standard describes the test method and
board specifications for measuring the thermal
resistance from junction to ambient. The actual thermal
resistance for a particular application can vary
depending on many factors such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an Appli-
cation” (DS00792), for more information regarding this
subject.
PDMAX
()
TJMAX
()
TAMAX
()
()
R
θ
JA
---------------------------------------------------
=
PD(MAX) = Maximum device power dissipation
TJ(MAX) = maximum continuous junction
temperature
TA(MAX) = maximum ambient temperature
R
θJA = Thermal resistance from junction-to-
ambient
TJRISE
()
PDMAX
()
R
θ
JA
×
=
TJ(RISE) = Rise in device junction temperature
over the ambient temperature
PD(MAX) = Maximum device power dissipation
R
θJA = Thermal resistance from junction-to-
ambient
TJ
TJRISE
()
TA
+
=
TJ = Junction temperature
TJ(RISE) = Rise in device junction temperature
over the ambient temperature
TA = Ambient temperature
Package
Package Type = TO-220-5
Input Voltage
VIN = 3.3V ± 5%
LDO Output Voltage and Current
VOUT = 2.5V
IOUT =1000 mA
Maximum Ambient Temperature
TA(MAX) =60°C
Internal Power Dissipation
PLDO(MAX) =(VIN(MAX) – VOUT(MIN)) x IOUT(MAX)
PLDO = ((3.3V x 1.05) – (2.5V x 0.975))
x 1000 mA
PLDO = 1.028 Watts
TJ(RISE) =PTOTAL x RθJA
TJRISE = 1.028 W x 29.3°C/W
TJRISE = 30.12°C



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