| Electronic Components Datasheet Search |
|
STB80NF10 Datasheet(PDF) 5 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STB80NF10 Datasheet(HTML) 5 Page - STMicroelectronics |
|
5 / 14 page ![]() STB80NF10, STP80NF10 Electrical characteristics Doc ID 6958 Rev 18 5/14 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current - 80 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 320 A VSD (2) 2. Pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 80 A, VGS = 0 - 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=80 A, VDD = 50 V di/dt = 100 A/µs, Tj=150 °C - 106 450 8.5 ns nC A |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |