STPS2060CT datasheet(3/7 Pages) STMICROELECTRONICS

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STPS2060C

Characteristics

3/7

Figure 1.

Conduction losses versus average

current (per diode)

Figure 2.

Average forward current versus

ambient temperature (

δ = 0.5, per

diode)

012

456

789

(W)

F(AV)

(A)

F(AV)

δ=tp/T

δ = 0.05

δ = 0.1

δ = 0.2

δ = 1

δ = 0.5

100

125

150

I(A)

F(AV)

(°C)

amb

δ=tp/T

R=R

th(j-a)

th(j-c)

=15°C/W

th(j-a)

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Normalized avalanche power

derating versus junction

temperature

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Figure 5.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

Figure 6.

Relative variation of thermal

impedance junction to case versus

pulse duration

100

120

140

160

180

1.E-03

1.E-02

1.E-01

1.E+00

I(A)

δ=0.5

t(s)

T =50°C

T =75°C

T =110°C

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

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