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STPS3045CT/CG/CR/CP/CPI/CW/CFP
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Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-220AB / D
2PAK/I2PAK
Per diode
Total
1.60
0.85
°C/W
SOT-93 / TO-247
Per diode
Total
1.5
0.8
TO-220FPAB
Per diode
Total
4
3.2
TOP-3I
Per diode
Total
2.2
1.6
Rth(c)
TO-220AB / D
2PAK/I2PAK
SOT-93 / TO-247
Coupling
0.10
TO-220FPAB
Coupling
2.5
TOP-3I
Coupling
1.0
When the diodes 1 and 2 are used simultaneously:
∆ Tj (diode 1) = P (diode1) x Rth(j-c) (per diode) + P (diode 2) x Rth(c)
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS)
RMS forward current
30
A
IF(AV)
Average forward
current
δ = 0.5
TO-220AB / D
2PAK /
I
2PAK / SOT-93 / TO-247
Tc = 155°C
Per diode
Per de-
vice
15
30
A
TO-220FPAB
Tc = 130°C
TOP-3I
Tc = 150°C
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
220
A
IRRM
Repetitive peak reverse current
tp = 2 µs square
F = 1kHz
1A
IRSM
Non repetitive peak reverse current
tp = 100 µs square
3
A
PARM
Repetitive peak avalanche power
tp = 1µs
Tj = 25°C
6000
W
Tstg
Storage temperature range
-65 to +175
°C
Tj
Maximum operating junction temperature *
175
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
ABSOLUTE RATINGS (limiting values, per diode)
*:
dPtot
dTj
Rth j
a
<
−
1
()
thermal runaway condition for a diode on its own heatsink
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
IR *
Reverse leakage current
Tj = 25°C
VR =VRRM
200
µA
Tj = 125°C
11
40
mA
VF *
Forward voltage drop
Tj = 125
°CIF = 15 A
0.5
0.57
V
Tj=25
°CIF = 30 A
0.84
Tj = 125°C
IF = 30 A
0.65
0.72
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Pulse test :
* tp = 380 µs,
δ <2%
To evaluate the conduction losses use the following equation :
P=0.42xIF(AV) + 0.01 IF
2
(RMS)
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