DMC3021LSD

Document number: DS32152 Rev. 1 - 2

1 of 8

www.diodes.com

May 2010

© Diodes Incorporated

DMC3021LSD

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features

•

Low On-Resistance

•

N-Channel: 21m

Ω @ 10V

32m

Ω @ 4.5V

•

P-Channel: 39m

Ω @ 10V

53m

Ω @ 4.5V

•

Low Input Capacitance

•

Fast Switching Speed

•

Low Input/Output Leakage

•

Complementary Pair MOSFET

•

Lead Free/RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: SO-8

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminals Connections: See Diagram

•

Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

•

Marking Information: See Page 6

•

Ordering Information: See Page 6

•

Weight: 0.072 grams (approximate)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 3)

Steady

State

8.5

7.1

A

Pulsed Drain Current (Note 4)

26

A

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Continuous Drain Current (Note 3)

Steady

State

-7.0

-4.5

A

Pulsed Drain Current (Note 4)

-25

A

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 3)

2.5

W

Thermal Resistance, Junction to Ambient (Note 3)

50

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB, with minimum recommended pad layout.

4. Repetitive rating, pulse width limited by junction temperature.

SO-8

Top View

Top View

D

1

S

1

G

1

D

2

S

2

G

2

N-Channel MOSFET

P-Channel MOSFET

S2

D1

S1

D2

G1

G2

D2

D1