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DSS3515M Datasheet(PDF) 3 Page - Diodes Incorporated |
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DSS3515M Datasheet(HTML) 3 Page - Diodes Incorporated |
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3 / 5 page ![]() DSS3515M Document number: DS31819 Rev. 3 - 2 3 of 5 www.diodes.com January 2011 © Diodes Incorporated DSS3515M Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO -15 ⎯ ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage (Note 5) BVCEO -15 ⎯ ⎯ V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage BV)EBO -6 ⎯ ⎯ V IE = -100μA, IC = 0 Collector Cutoff Current ICBO ⎯ ⎯ -100 -50 nA μA VCB = -15V, IE = 0 VCB = -15V, IE = 0, TA = 150°C Emitter Cutoff Current IEBO ⎯ ⎯ -100 nA VEB = -5V, IC = 0 ON CHARACTERISTICS (Note 5) DC Current Gain hFE 200 150 90 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VCE = -2V, IC = -10mA VCE = -2V, IC = -100mA VCE = -2V, IC = -500mA Collector-Emitter Saturation Voltage VCE(sat) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -25 -150 -250 mV IC = -10mA, IB = -0.5mA IC = -200mA, IB = -10mA IC = -500mA, IB = -50mA Collector-Emitter Saturation Resistance RCE(sat) ⎯ ⎯ 500 m Ω IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(sat) ⎯ ⎯ -1.1 V IC = -500mA, IB = -50mA Base-Emitter Turn On Voltage VBE(on) ⎯ ⎯ -0.9 V VCE = -2V, IC = -100mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ ⎯ 10 pF VCB = -10V, f = 1.0MHz Current Gain-Bandwidth Product fT 100 340 ⎯ MHz VCE = -5V, IC = -100mA, f = 100MHz Notes: 5. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%. 0 0.20 0.40 0.60 0.80 1.00 01 2 3 4 5 -V , COLLECTOR-EMITTER VOLTAGE (V) CE Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage I = -1mA B I = -2mA B I = -3mA B I = -4mA B I = -5mA B 1 10 100 1,000 -I , COLLECTOR CURRENT (mA) C Fig. 5 Typical DC Current Gain vs. Collector Current 0 100 200 300 400 500 600 700 800 T = -55°C A T = 25°C A T = 85°C A T = 125°C A T = 150°C A |
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