8050S-X-AE3-R datasheet(2/4 Pages) UTC

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8050S

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-001,E

ABSOLUTE MAXIMUM RATING ( Ta=25°C, unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

VEBO

Collector Current

700

SOT-23

350

Collector Dissipation(Ta=25°C)

TO-92

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC = 100μA, IE = 0

Collector-Emitter Breakdown Voltage

BVCEO

IC = 1mA, IB = 0

Emitter-Base Breakdown Voltage

BVEBO

IE = 100μA, IC =0

Collector Cut-Off Current

ICBO

VCB = 30V,IE = 0

Emitter Cut-Off Current

IEBO

VEB = 5V, IC = 0

100

hFE1

VCE = 1V, IC = 1mA

100

400

hFE2

VCE = 1V, IC = 150 mA

120

DC Current Gain(note)

hFE3

VCE = 1V, IC = 500mA

Collector-Emitter Saturation Voltage

VCEO(SAT) IC = 500mA, IB = 50mA

0.5

Base-Emitter Saturation Voltage

VBEO(SAT) IC = 500mA, IB = 50mA

1.2

Base-Emitter Saturation Voltage

VBEO(SAT) VCE = 1V, IC = 10mA

1.0

Current Gain Bandwidth Product

VCE = 10V, IC = 50mA

100

MHz

Output Capacitance

Cob

VCB = 10V, IE = 0, f = 1MHz

9.0

CLASSIFICATION OF hFE2

RANK

RANGE

120-200

160-300

280-400

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