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IXFN360N10T Datasheet(PDF) 5 Page - IXYS Corporation

Part # IXFN360N10T
Description  GigaMOS Trench HiperFET Power MOSFET
PDF  6 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFN360N10T Datasheet(HTML) 5 Page - IXYS Corporation

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© 2009 IXYS CORPORATION, All Rights Reserved
IXFN360N10T
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
40
80
120
160
200
240
280
40
60
80
100
120
140
160
180
200
ID - Amperes
TJ = 25ºC
TJ = 125ºC
RG = 1Ω , VGS = 10V
VDS = 50V
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
0
100
200
300
400
500
600
700
12
345
67
8
9
10
RG - Ohms
0
30
60
90
120
150
180
210
t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 50V
I D = 100A
I D = 200A
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
100
150
200
250
300
350
400
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
60
70
80
90
100
110
120
t f
td(off) - - - -
RG = 1Ω, VGS = 10V
VDS = 50V
I D = 100A
I D = 200A
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
0
50
100
150
200
250
300
350
400
40
60
80
100
120
140
160
180
200
ID - Amperes
60
70
80
90
100
110
120
130
140
t f
td(off) - - - -
RG = 1Ω, VGS = 10V
VDS = 50V
TJ = 25ºC
TJ = 125ºC
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
40
80
120
160
200
240
280
320
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
RG = 1Ω , VGS = 10V
VDS = 50V
I D = 200A
I D = 100A
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
100
200
300
400
500
600
700
12
34
56
78
9
10
RG - Ohms
50
150
250
350
450
550
650
t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
VDS = 50V
I D = 200A
I D = 100A



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