S2N7002DW datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

S2N7002DW

115mA, 60V

Dual N-Channel MOSFET

19-May-2011 Rev. B

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0, ID=10μA

Gate-Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

Gate-Source Leakage

IGSS

±1

μA

VDS=0 , VGS= ±20V

TC= 25°C

VDS=60V, VGS=0

Zero Gate Voltage Drain Current

TC= 125°C

IDSS

500

μA

VDS=60V, VGS=0

On-State Drain Current

ID(on)

0.5

VGS=10V, VDS=7.5V

TJ= 25°C

7.5

VGS=5V, ID=0.05A

Drain-Source On Resistance

TJ= 125°C

RDS(ON)

13.5

Ω

VGS=10V, ID=0.5A

Forward Transconductance

gFS

VDS≧2 VDS(ON), ID= 0.2A

Body-Drain Diode Ratings

Diode Forward On–Voltage

VSD

-1.5

IS=115mA, VGS=0

Source Current Continuous(Body Diode)

-115

Source Current Pulsed

ISM

-800

Dynamic Characteristics

Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VDS=25V,

VGS=0,

f=1MHz

Switching Characteristics

Turn-on Delay Time

Td(ON)

Turn-off Delay Time

Td(OFF)

VDD=25V, I D=0.5A

RL=50Ω,

VGEN=10V, RG=25Ω

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