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SMG2328NE Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Part # SMG2328NE
Description  N-Channel Enhancement MOSFET
PDF  2 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SMG2328NE Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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SMG2328NE
6.3 A, 20 V, RDS(ON) 22 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
05-Jan-2011 Rev. A
Page 2 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Static
Gate-Threshold Voltage
VGS(th)
0.4
-
-
V
VDS = VGS, ID = 250μA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS = 0V, VGS= ±8V
Zero Gate Voltage Drain Current
IDSS
-
-
1
μA
VDS = 16V, VGS= 0V
-
-
10
VDS = 16V, VGS= 0V, TJ=55°C
On-State Drain Current
1
ID(ON)
10
-
-
A
VDS = 5V, VGS= 4.5V
Drain-Source On-Resistance
1
RDS(ON)
-
-
22
mΩ
VGS= 4.5V, ID = 6.5A
-
-
26
VGS= 2.5V, ID = 5.8A
Forward Transconductance
1
gFS
-
11.3
-
S
VDS= 10V,,ID = 6.5A
Diode Forward Voltage
VSD
-
0.75
-
V
IS= 1.6A, VGS= 0V
Dynamic
2
Total Gate Charge
Qg
-
13.4
-
nC
ID= 6.5A
VDS= 10V
VGS= 4.5V
Gate-Source Charge
Qgs
-
0.9
-
Gate-Drain Charge
Qgd
-
2.0
-
Turn-On Delay Time
Td(ON)
-
8
-
nS
ID= 1A, VDD= 10V
VGEN= 4.5V
RL= 15Ω
Rise Time
Tr
-
24
-
Turn-Off Delay Time
Td(OFF)
-
35
-
Fall Time
Tf
-
10
-
Notes:
1.
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2.
Guaranteed by design, not subject to production testing.



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