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2N6702 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6702 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N6702 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.01A ;IB=0 90 V VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=0.5A 0.8 V VCEsat-2 Collector-emitter saturation voltage IC=7A;IB=0.7A 1.5 V VBE sat Base-emitter saturation voltage IC=5A;IB=0.5A 1.5 V ICEV Collector cut-off current VCE=140V;VBE=1.5V TC=125℃ 0.1 1.0 mA IEBO Emitter cut-off current VBE=7V; IC=0 0.1 mA hFE-1 DC current gain IC=0.2A ; VCE=2V 30 hFE-2 DC current gain IC=5A ; VCE=2V 20 Cob Output capacitance IE=0 ; f=0.1MHz,VCB=10V 50 150 pF fT Transition frequency IC=0.5A ; VCE=10V 50 200 MHz |
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