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2SA1986 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1986 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SA1986 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -230 V VCEsat Collector-emitter saturation voltage IC=-8 A;IB=-0.8A -3.0 V VBE Base-emitter voltage IC=-7A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-230V; IE=0 -5 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-7A ; VCE=-5V 35 fT Transition frequency IC=-1A ; VCE=-5V 30 MHz COB Output capacitance IE=0; VCB=-10V;f=1MHz 360 pF hFE-1 classifications R O 55-110 80-160 |
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