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2SD1127 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1127 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1127 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= ∞ 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 25mA 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE=0 100 μA hFE DC Current Gain IC= 10A; VCE= 2V 1000 Switching times ton Turn-On Time 0.8 μs toff Turn-Off Time IC= 5A, IB1= -IB2= 10mA 8.0 μs isc Website:www.iscsemi.cn 2 |
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