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BUT12F Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BUT12F
Description  Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUT12F Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUT12F Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUT12F Datasheet HTML 2Page - Inchange Semiconductor Company Limited BUT12F Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
BUT12F BUT12AF
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BUT12F
400
VCEO(SUS)
Collector-emitter
sustaining voltage
BUT12AF
IC=0.1A; IB=0;L=25mH
450
V
BUT12F
IC=6A; IB=1.2A
VCEsat
Collector-emitter
saturation voltage
BUT12AF
IC=5A; IB=1A
1.5
V
BUT12F
IC=6A; IB=1.2A
VBEsat
Base-emitter
saturation voltage
BUT12AF
IC=5A; IB=1A
1.5
V
BUT12F
VCE=850V ;VBE=0
Tj=125℃
1.0
3.0
ICES
Collector
cut-off current
BUT12AF
VCE=1000V ;VBE=0
Tj=125℃
1.0
3.0
mA
IEBO
Emitter cut-off current
VEB=9V; IC=0
10
mA
hFE-1
DC current gain
IC=10mA ; VCE=5V
10
35
hFE-2
DC current gain
IC=1A ; VCE=5V
10
35
Switching times resistive load
ton
Turn-on time
1.0
μs
ts
Storage time
4.0
μs
tf
Fall time
For BUT12F
IC=6A;IB1=-IB2=1.2A;VCC=250V
For BUT12AF
IC=5A;IB1=-IB2=1A;VCC=250V
0.8
μs



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