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SI4618DY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4618DY Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 15 page  www.vishay.com 2 Document Number: 74450 S09-2109-Rev. B, 12-Oct-09 Vishay Siliconix Si4618DY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 1 mA Ch-1 30 V VGS = 0 V, ID = 1 mA Ch-2 30 VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA Ch-1 35 VGS(th) Temperature Coefficient ΔV GS(th)/TJ ID = 250 µA Ch-1 - 6 Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA Ch-1 1 2.5 VDS = VGS, ID = 1 mA Ch-2 1 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 16 V Ch-1 100 µA VDS = 0 V, VGS = ± 16 V Ch-2 100 Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Ch-1 0.001 mA VDS = 30 V, VGS = 0 V Ch-2 0.05 0.5 VDS = 30 V, VGS = 0 V, TJ = 100 °C Ch-1 0.025 VDS = 30 V, VGS = 0 V, TJ = 100 °C Ch-2 3 15 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V Ch-1 20 A VDS = 5 V, VGS = 10 V Ch-2 20 Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 8 A Ch-1 0.014 0.017 Ω VGS = 10 V, ID = 8 A Ch-2 0.0083 0.010 VGS = 4.5 V, ID = 5 A Ch-1 0.016 0.0195 VGS = 4.5 V, ID = 5 A Ch-2 0.0095 0.0115 Forward Transconductanceb gfs VDS = 15 V, ID = 8 A Ch-1 40 S VDS = 15 V, ID = 8 A Ch-2 47 Dynamica Input Capacitance Ciss Channel-1 VDS = 15 V, VGS = 0 V, f = 1 MHz Channel-2 VDS = 15 V, VGS = 0 V, f = 1 MHz Ch-1 1535 pF Ch-2 2290 Output Capacitance Coss Ch-1 205 Ch-2 360 Reverse Transfer Capacitance Crss Ch-1 91 Ch-2 117 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 8 A Ch-1 29 44 nC VDS = 15 V, VGS = 10 V, ID = 8 A Ch-2 39 59 Channel-1 VDS = 15 V, VGS = 4.5 V, ID = 8 A Channel-2 VDS = 15 V, VGS = 4.5 V, ID = 8 A Ch-1 12.5 19 Ch-2 17 26 Gate-Source Charge Qgs Ch-1 4.1 Ch-2 5.6 Gate-Drain Charge Qgd Ch-1 3.4 Ch-2 4 Gate Resistance Rg f = 1 MHz Ch-1 1.8 3.0 Ω Ch-2 1.9 3.0 |
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