Vishay Siliconix

Si4774DY

New Product

Document Number: 67953

S11-1179-Rev. A, 13-Jun-11

www.vishay.com

1

This document is subject to change without notice.

N-Channel 30 V (D-S) MOSFET with Schottky Diode

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•



Power MOSFET and Schottky Diode

•

•

100 % UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Notebook PC

- System Power, Memory

•

Buck Converter

•

Synchronous Rectifier Switch

Notes:

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 85 °C/W.

PRODUCT SUMMARY

a

30

16

9.5 nC

15

SO-8

SD

SD

SD

GD

5

6

7

8

Top View

2

3

4

1

Ordering Information:

Si4774DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

S

D

Schottky Diode

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

± 20

16

A

13.6

Pulsed Drain Current (t = 300 µs)

50

Continuous Source-Drain Diode Current

4.5

Single Pulse Avalanche Current

L = 0.1 mH

15

Single Pulse Avalanche Energy

11.25

mJ

Maximum Power Dissipation

5

W

3.2

Operating Junction and Storage Temperature Range

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typ.

Max.

Unit

Maximum Junction-

t

 10 s

38

50

°C/W

Maximum Junction-

to-Foot (Drain)

Steady State

20

25