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WFP730 Datasheet(PDF) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFP730 Datasheet(HTML) 2 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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2 / 7 page  2/7 Steady, Steady, Steady, Steady, keep keep keep keep you you you you advance advance advance advance WF WF WF WFP P P P73 73 73 730 0 0 0 E E E Ellllec ec ec ecttttrrrriiiical cal cal cal Ch Ch Ch Cha a a arrrrac ac ac actttte e e errrriiiis s s sttttiiiics cs cs cs ((((T T T Tc c c c = = = = 2 2 2 25 5 5 5°C C C C)))) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA Gate−source breakdown voltage V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V Drain cut−off current IDSS VDS = 400 V, VGS = 0 V - - 1 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 400 - - V Break Voltage Temperature Coefficient ΔBVDSS/ ΔTJ ID=250μA, Referenced to 25℃ - 0.4 - V/℃ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 2.75A - 0.83 1 Ω Forward Transconductance gfs VDS = 50 V, ID = 2.75A - 4.5 - S Input capacitance Ciss VDS = 25 V, VGS = 0 V, f = 1 MHz - 550 720 pF Reverse transfer capacitance Crss - 23 30 Output capacitance Coss - 85 110 Switching time Rise time tr VDD =200 V, ID =3.5A RG=25Ω (Note4,5) - 15 40 ns Turn−on time ton - 55 120 Fall time tf - 85 180 Turn−off time toff - 50 110 Total gate charge (gate−source plus gate−drain) Qg VDD = 320 V, VGS = 10 V, ID = 3.5 A (Note4,5) - 32 38 nC Gate−source charge Qgs - 4.3 5.7 Gate−drain (“miller”) Charge Qgd - 14 22 Sou Sou Sou Sourrrrc c c ce e e e− − − −D D D Drrrra a a aiiiin n n n R R R Ra a a atttting ing ing ings s s s a a a an n n nd d d d Ch Ch Ch Cha a a arrrrac ac ac actttte e e errrriiiis s s sttttiiiics cs cs cs ((((T T T Ta a a a = = = = 2 2 2 25 5 5 5°C C C C)))) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 5.5 A Pulse drain reverse current IDRP - - - 22 A Forward voltage (diode) VDSF IDR = 5.5 A, VGS = 0 V - 1.4 1.5 V Reverse recovery time trr IDR = 5.5 A, VGS = 0 V, dIDR / dt = 100 A / μs - 265 530 ns Reverse recovery charge Qrr - 2.32 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH,IAS=5.5A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤5.5A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution |
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