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WFU2N60B Datasheet(PDF) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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WFU2N60B Datasheet(HTML) 1 Page - Shenzhen Winsemi Microelectronics Co., Ltd |
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1 / 7 page  Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WFU2N60 WFU2N60 WFU2N60 WFU2N60B B B B Rev.A Nov.2010 Silicon Silicon Silicon Silicon N-Channel N-Channel N-Channel N-Channel MOSFET MOSFET MOSFET MOSFET Features � 2A,600V,RDS(on)(Max 5.0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 9nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply . Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain Source Voltage 600 V ID Continuous Drain Current(@Tc=25℃) 2.0 A Continuous Drain Current(@Tc=100℃) 1.3 A IDM Drain Current Pulsed (Note1) 8 A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note2) 140 mJ EAR Repetitive Avalanche Energy (Note1) 6.4 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 5.5 V/ ns PD Total Power Dissipation(@Tc=25℃) 46 W Derating Factor above 25℃ 0.35 W/℃ TJ,Tstg Junction and Storage Temperature -55~150 ℃ TL Channel Temperature 300 ℃ Thermal Characteristics Symbol Parameter Value Units Min Typ Max RQJC Thermal Resistance , Junction -to -Case - - 2.7 ℃/W RQCS Thermal Resistance , Case-to-Sink 0.5 - - ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W |
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