MPSA45G-AB3-R datasheet(2/4 Pages) UTC

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MPSA44/45

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R208-006, G

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

MPSA44

VCBO

500

MPSA45

400

Collector-Emitter Voltage

MPSA44

VCEO

400

MPSA45

350

Emitter-Base Voltage

VEBO

Collector Current

300

Collector Dissipation

SOT-89

500

TO-92

625

Junction Temperature

125

°C

Operating Temperature

TOPR

-20 ~ +85

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (T

J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base

Breakdown

Voltage

MPSA44

BVCBO

IC=100μA, IE=0

500

MPSA45

400

Collector-Emitter

Breakdown Voltage

MPSA44

BVCEO

IC=1mA, IB=0

400

MPSA45

350

Emitter-Base Breakdown Voltage

BVEBO

IE=100μA, IC=0

Collector Cutoff Current

MPSA44

ICBO

VCB=400V, IE=0

0.1

μA

MPSA45

VCB=320V, IE=0

0.1

Collector Cutoff Current

MPSA44

ICEO

VCE=400V, IB=0

0.5

μA

MPSA45

VCE=320V, IB=0

0.5

Emitter Cutoff Current

IEBO

VEB=4V, IC=0

0.1

μA

ON CHARACTERISTICS

DC Current Gain (Note)

hFE

VCE=10V, IC=1mA

240

VCE=10V, IC=10mA

240

VCE=10V, IC=50mA

240

VCE=10V, IC=100mA

240

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=1mA, IB=0.1mA

0.4

IC=10mA, IB=1mA

0.5

IC=50mA, IB=5mA

0.75

Base-Emitter Saturation Voltage

VBE(SAT)

IC=10mA, IB=1mA

0.75

SMALL-SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

VCE=20V,I C=10mA, f=100MHz

MHz

Output Capacitance

COB

VCB=20V, IE=0 f=1MHz

Note: Pulse test: PW<300

μs, Duty Cycle<2%

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