5302D

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R213-018. E

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

800

V

Collector-Emitter Voltage

400

V

Emitter-Base Voltage

10

V

Collector Current

2

A

4

A

Base Current

1

A

2

A

TO-126

12.5

W

TO-92

1.6

TO-251/ TO-252

25

Junction Temperature

+150

°С

Storage Temperature

-65 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-126

122

°С/W

TO-92

160

TO-251/ TO-252

100

Junction to Case

TO-126

10

°С/W

TO-92

80

TO-251/ TO-252

5

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

400

V

Collector-Base Breakdown Voltage

800

V

Emitter-Base Breakdown Voltage

10

V

Collector Cutoff Current

1

μA

Emitter Cutoff Current

1

μA

ON CHARACTERISTICS

DC Current Gain

10

10

40

5

Collector-Emitter Saturation Voltage

0.5

V

1.1

1.5

Base-Emitter Saturation Voltage

1.1

V

1.2

SWITCHING CHARACTERISTICS

Turn On Time

Duty Cycle<1%

0.15

0.3

μS

Fall Time

0.2

0.4

μS

Storage Time

0.5

0.9

μS

DIODE

Forward Voltage Drop

1.4

V

Fall Time

800

μS

Note: Pulsed duration = 300μS, Duty cycle≤2%