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DTA123EG-AL3-R Datasheet(PDF) 2 Page - Unisonic Technologies |
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DTA123EG-AL3-R Datasheet(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() DTA123E PNP SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R206-086,C ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Supply Voltage VCC -50 V Input Voltage VIN -12 ~ +10 V Output Current IOUT -100 mA Power Dissipation SOT-523 PD 150 mW SOT-23/SOT-323 200 mW TO-92 625 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL SPECIFICATIONS (TA=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Input Voltage VIN(OFF) VCC =-5V, IOUT =-100μA -0.5 V VIN(ON) VOUT =-0.3V, IOUT =-20mA -3 Output Voltage VOUT(ON) IOUT/IIN =10mA/-0.5mA -0.1 -0.3 V Input Current IIN VIN=-5V -3.8 mA Output Current IOUT(OFF) VCC =-50V, VIN =0V -0.5 μA DC Current Gain GIN VOUT =-5V, IOUT =-20mA 20 Input Resistance R1 1.54 2.2 2.86 KΩ Resistance Ratio R2/R1 0.8 1 1.2 Transition Frequency fT VCE =-10V, IE =−5mA, f=100MHz (Note) 250 MHz Note: Transition frequency of the device |
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