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UTC654L-AG6-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UTC654L-AG6-R
Description  P-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTC654L-AG6-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UTC654
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-153.B
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 3)
ID
-3.6
Pulsed Drain Current (Note 2)
IDM
-10
A
Power Dissipation
PD
1.6
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
78
°C/W
Junction-to-Case
θJC
30
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID =-250 µA
-30
V
Drain-Source Leakage Current
IDSS
VDS =-24V, VGS =0 V
-1
µA
Gate-Source Leakage Current
IGSS
VDS = 0V, VGS =±20V
±100
nA
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Referenced to 25°C,ID=-250μA
-22
mV/℃
ON CHARACTERISTICS
Gate-Threshold Voltage
VGS(TH)
VDS =VGS, ID =-250 µA
-1
-1.9
-3
V
VGS =-10 V, ID =-3.6A
63
75
Static Drain-Source On-Resistance (Note2)
RDS(ON)
VGS =-4.5 V, ID =-2.7A
100
125
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
298
Output Capacitance
COSS
83
Reverse Transfer Capacitance
CRSS
VDS=-15V, VGS =0V, f=1.0MHz
39
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note2)
tD(ON)
6
12
Turn-ON Rise Time
tR
13
23
Turn-OFF Delay Time
tD(OFF)
11
20
Turn-OFF Fall-Time
tF
VDD =-15V, ID=-1A, VGS =-10V,
RGEN =6 Ω
6
12
ns
Total Gate Charge (Note2)
QG
6.2
9
Gate-Source Charge
QGS
1
Gate-Drain Charge
QGD
VDS =-15V,VGS=-10V,ID=-3.6 A
1.2
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V,IS=-1.3 A (Note 2)
-0.8
-1.2
V
Maximum Continuous Drain Source Diode
Forward Current
IS
-1.3
A
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on 1 in
2 copper pad of FR4 board; 270℃/W when mounted on min.



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