UTF3055G-TN3-R datasheet(2/5 Pages) UTC

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UTF3055

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-318.D

ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain Source Voltage

VDSS

Drain Gate Voltage (RGS = 10MΩ )

VDGR

Continuous

±20

Gate Source Voltage

Non-Repetitive (tP ≤10 ms)

VGSS

±30

Continuous Drain Current (Ta = 25°C)

3.0

Pulsed Drain Current (tP ≤10 µs)

IDM

9.0

Single Pulsed Avalanche Energy (Note 2)

EAS

SOT-223

0.83

Power Dissipation (Ta = 25°C) (Note 3)

TO-252

1.136

SOT-223

Derate above 25°C

TO-252

mW/°C

Junction Temperature

175

°C

Strong Temperature

TSTG

-55 ~ +175

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. TJ = 25°C ,VDD = 25V, VGS = 10V, IL = 7.0A, L = 3.0mH, VDS = 60V

3. When surface mounted to an FR4 board using 1″pad size, 1 oz.(Cu. Area 1.127 sq in ).

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

SOT-223

150

Junction to Ambient (Note)

TO-252

θJA

110

°C/W

Note: When surface mounted to an FR4 board using 1″pad size, 1 oz.(Cu. Area 1.127 sq in ).

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