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STM8S207MB Datasheet(PDF) 65 Page - STMicroelectronics

Part # STM8S207MB
Description  Performance line, 24 MHz STM8S 8-bit MCU, up to 128 KB Flash
PDF  103 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8S207MB Datasheet(HTML) 65 Page - STMicroelectronics

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STM8S207xx, STM8S208xx
Electrical characteristics
Doc ID 14733 Rev 12
65/103
Figure 17.
HSE oscillator circuit diagram
HSE oscillator critical gm formula
Rm: Notional resistance (see crystal specification)
Lm: Notional inductance (see crystal specification)
Cm: Notional capacitance (see crystal specification)
Co: Shunt capacitance (see crystal specification)
CL1=CL2=C: Grounded external capacitance
gm >> gmcrit
Table 32.
HSE oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSE
External high speed oscillator
frequency
124
MHz
RF
Feedback resistor
220
k
Ω
C(1)
Recommended load capacitance (2)
20
pF
IDD(HSE)
HSE oscillator power consumption
C = 20 pF,
fOSC = 24 MHz
6 (startup)
2 (stabilized)(3)
mA
C = 10 pF,
fOSC = 24 MHz
6 (startup)
1.5 (stabilized)(3)
gm
Oscillator transconductance
5
mA/V
tSU(HSE)
(4) Startup time
VDD is stabilized
1
ms
1.
C is approximately equivalent to 2 x crystal Cload.
2.
The oscillator selection can be optimized in terms of supply current using a high quality resonator with small Rm value.
Refer to crystal manufacturer for more details
3.
Data based on characterization results, not tested in production.
4.
tSU(HSE) is the start-up time measured from the moment it is enabled (by software) to a stabilized 24 MHz oscillation is
reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.
OSCOUT
OSCIN
fHSE to core
CL1
CL2
RF
STM8
Resonator
Consumption
control
gm
Rm
Cm
Lm
CO
Resonator
g
mcrit
2
Π
×
f
HSE
×
()2 R
m
×
2Co
C
+
()
2
=



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