Characteristics

STPS3045C-Y

2/7

Doc ID 17264 Rev 1

1

Characteristics

When the diodes 1 and 2 are used simultaneously :

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

45

V

Forward rms voltage

30

A

Average forward current

δ = 0.5

Per diode

Per device

10

30

A

Surge non repetitive forward current

220

A

Repetitive peak avalanche power

6000

W

Storage temperature range

-65 to +175

°C

1.

condition to avoid thermal runaway for a diode on its own heatsink

-40 to +175

°C

dV/dt

Critical rate of rise reverse voltage

10000

V/µs

Table 3.

Thermal resistance parameters

Symbol

Parameter

Value

Unit

Junction to case

Per diode

Total

1.60

0.85

° C/W

Coupling

0.10

° C/W

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

(1)

1.

Reverse leakage current

--

200

µA

-

11

40

mA

(1)

Forward voltage drop

-

0.5

0.57

V

-

-

0.84

-

0.65

0.72

dPtot

dTj

---------------

1

Rth j a

–

()

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