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BUZ31 Datasheet(PDF) 1 Page - Comset Semiconductor

Part # BUZ31
Description  POWER MOS TRANSISTORS
PDF  3 Pages
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Manufacturer  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

BUZ31 Datasheet(HTML) 1 Page - Comset Semiconductor

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BUZ31
01/10/2012
COMSET SEMICONDUCTORS
1/3
SEMICONDUCTORS
POWER MOS TRANSISTORS
FEATURE
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VDS
Drain-Source Voltage
200
V
IDS
Continuous Drain Current TC= 37°C
14.5
A
IDM
Pulsed Drain Current TC= 25°C
58
IAR
Avalanche Current, Limited by Tjmax
14.5
EAR
Avalanche Energy, Periodic Limited by Tjmax
9
mJ
EAS
Avalanche Energy, Single pulse
ID = 14.5 A, VDD = 50 V, RGS = 25 Ω
L = 1.42 mH, Tj = 25°C
200
VGS
Gate-Source Voltage
20
V
RDS(on)
Drain-Source on Resistance
0.2
Ω
PT
Power Dissipation at Case Temperature TC= 25°C
95
W
tJ
Operating Temperature
-55 to +150
°C
tstg
Storage Temperature range
-55 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJC
Thermal Resistance, chip case
<1.32
K/W
RthJA
Thermal Resistance, chip to ambient
<75
• Nchannel
• Enhancement mode
• Avalanche-rated
• TO-220 envelope
• Compliance to RoHS.


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