AOP605_09 datasheet(2/9 Pages) AOSMD

2 / 9 page

AOP605

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

100

VGS(th)

1.8

ID(ON)

22.6

TJ=125°C

Ω

gFS

VSD

0.76

Ciss

680

820

Coss

102

Crss

1.2

Ω

Qg(10V)

13.84

16.6

6.74

8.1

Qgs

1.82

Qgd

3.2

tD(on)

4.6

4.1

tD(off)

20.6

5.2

trr

16.5

Qrr

7.8

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery charge

Body Diode Reverse Recovery time

Total Gate Charge

VGS=4.5V, VDS=15V, ID=7.5A

IF=7.5A, dI/dt=100A/µs

Turn-Off DelayTime

Turn-Off Fall Time

Turn-On DelayTime

VGS=10V, VDS=15V, RL=2.0Ω,

RGEN=6Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Body Diode Forward Voltage

IS=1A, VGS=0V

VGS=0V, VDS=15V, f=1MHz

Reverse Transfer Capacitance

Input Capacitance

Output Capacitance.

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On Rise Time

Maximum Body-DiodeContinuous Current

DYNAMIC PARAMETERS

Ω

VGS=4.5V, ID=6.0A

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=7.5A

Forward Transconductance

VDS=5V, ID=7.5A

Gate Threshold Voltage

VDS=VGS ID=250µA

On state drain current

VGS=10V, VDS=5V

µA

Gate-Body leakage current

VDS=0V, VGS=±20V

n-channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=24V, VGS=0V

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The value

in any given application depends on the user's specific board design. The current rating is based on the t

≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

Rev 4 : Jan 2009

Alpha Omega Semiconductor, Ltd.

AOP605 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

AOP605 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL