MLP1N06CL

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Sustaining Voltage (Internally Clamped)

(ID = 20 mA, VGS = 0)

(ID = 20 mA, VGS = 0, TJ = 150°C)

V(BR)DSS

59

59

62

62

65

65

Vdc

Zero Gate Voltage Drain Current

(VDS = 45 V, VGS = 0)

(VDS = 45 V, VGS = 0, TJ = 150°C)

IDSS

—

—

0.6

6.0

5.0

20

µAdc

Gate–Body Leakage Current

(VG = 5.0 V, VDS = 0)

(VG = 5.0 V, VDS = 0, TJ = 150°C)

IGSS

—

—

0.5

1.0

5.0

20

µAdc

ON CHARACTERISTICS*

Gate Threshold Voltage

(ID = 250 µA, VDS = VGS)

(ID = 250 µA, VDS = VGS, TJ = 150°C)

VGS(th)

1.0

0.6

1.5

—

2.0

1.6

Vdc

Static Drain–to–Source On–Resistance

(ID = 1.0 A, VGS = 4.0 V)

(ID = 1.0 A, VGS = 5.0 V)

(ID = 1.0 A, VGS = 4.0 V, TJ = 150°C)

(ID = 1.0 A, VGS = 5.0 V, TJ = 150°C)

RDS(on)

—

—

—

—

0.63

0.59

1.1

1.0

0.75

0.75

1.9

1.8

Ohms

Forward Transconductance (ID = 1.0 A, VDS = 10 V)

gFS

1.0

1.4

—

mhos

Static Source–to–Drain Diode Voltage (IS = 1.0 A, VGS = 0)

VSD

—

1.1

1.5

Vdc

Static Drain Current Limit

(VGS = 5.0 V, VDS = 10 V)

(VGS = 5.0 V, VDS = 10 V, TJ = 150°C)

ID(lim)

2.0

1.1

2.3

1.3

2.75

1.8

A

RESISTIVE SWITCHING CHARACTERISTICS*

Turn–On Delay Time

(VDD = 25 V, ID = 1.0 A,

VGS = 5.0 V, RG = 50 Ohms)

td(on)

—

1.2

2.0

µs

Rise Time

(VDD = 25 V, ID = 1.0 A,

VGS = 5.0 V, RG = 50 Ohms)

tr

—

4.0

6.0

Turn–Off Delay Time

(VDD = 25 V, ID = 1.0 A,

VGS = 5.0 V, RG = 50 Ohms)

td(off)

—

4.0

6.0

Fall Time

tf

—

3.0

5.0

* Indicates Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%.

Figure 1. Output Characteristics

2

4

6

8

4

1

0

3

2

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

10 V

8 V

4 V

VGS = 3 V

0

6 V

Figure 2. Transfer Function

–50

°C

0

2

4

6

8

4

1

0

3

2

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

25

°C

VDS ≥ 7.5 V

TJ = 150°C

TJ = 25°C