MCP1826_13 datasheet(19/38 Pages) MICROCHIP

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DS22057B-page 19

MCP1826/MCP1826S

5.0

APPLICATION CIRCUITS/

ISSUES

5.1

Typical Application

The MCP1826/MCP1826S is used for applications that

require high LDO output current and a power good

output.

FIGURE 5-1:

Typical Application Circuit.

5.1.1

APPLICATION CONDITIONS

5.2

Power Calculations

5.2.1

POWER DISSIPATION

The internal power dissipation within the MCP1826/

MCP1826S is a function of input voltage, output

voltage, output current and quiescent current.

Equation 5-1 can be used to calculate the internal

power dissipation for the LDO.

EQUATION 5-1:

In addition to the LDO pass element power dissipation,

there is power dissipation within the MCP1826/

MCP1826S as a result of quiescent or ground current.

The power dissipation as a result of the ground current

can be calculated using the following equation:

EQUATION 5-2:

The total power dissipated within the MCP1826/

MCP1826S is the sum of the power dissipated in the

LDO pass device and the P(IGND) term. Because of the

CMOS construction, the typical IGND for the MCP1826/

MCP1826S is 120 µA. Operating at a maximum VIN of

3.465V results in a power dissipation of 0.12 milli-Watts

for a 2.5V output. For most applications, this is small

compared to the LDO pass device power dissipation

and can be neglected.

The

maximum

continuous

operating

junction

temperature specified for the MCP1826/MCP1826S is

+125°C. To estimate the internal junction temperature

of the MCP1826/MCP1826S, the total internal power

dissipation is multiplied by the thermal resistance from

junction-to-ambient (R

JA) of the device. The thermal

resistance from junction to ambient for the TO-220-5

package is estimated at 29.3°C/W.

EQUATION 5-3:

Package Type = TO-220-5

Input Voltage Range = 3.3V ± 5%

VIN maximum = 3.465V

VIN minimum = 3.135V

VDROPOUT (max) = 0.400V

VOUT (typical) = 2.5V

IOUT = 1000 mA maximum

PDISS (typical) = 0.965W

Temperature Rise = 28.27°C

10 µF

VOUT = 2.5V @ 1000 mA

10 k



PWRGD

SHDN

GND

4.7 µF

Off

MCP1826-2.5

3 4 5

3.3V

VIN

PLDO

VIN MAX



VOUT MIN



–

 I

OUT MAX





Where:

PLDO = LDO Pass device internal

power dissipation

VIN(MAX) = Maximum input voltage

VOUT(MIN) = LDO minimum output voltage

PIGND



VIN MAX



IVIN



Where:

PI(GND) = Power dissipation due to the

quiescent current of the LDO

VIN(MAX) = Maximum input voltage

IVIN = Current flowing in the VIN pin

with no LDO output current

(LDO quiescent current)

TJMAX



PTOTAL RJA



TAMAX



TJ(MAX) = Maximum continuous junction

temperature

PTOTAL = Total device power dissipation

JA = Thermal resistance from junction to

ambient

TA(MAX) = Maximum ambient temperature

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