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CSD23381F4 Datasheet(PDF) 1 Page - Texas Instruments |
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CSD23381F4 Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 12 page ![]() D G S 0.35 mm CSD23381F4 SLPS450B – OCTOBER 2013 – REVISED FEBRUARY 2014 CSD23381F4, 12 V P-Channel FemtoFET™ MOSFET . 1 Features Product Summary 1 • Ultra-Low On Resistance VDS Drain-to-Source Voltage –12 V • Ultra-Low Qg and Qgd Qg Gate Charge Total (–4.5 V) 1140 pC • High Operating Drain Current Qgd Gate Charge Gate to Drain 190 pC VGS = –1.8 V 480 m Ω • Ultra-Small Footprint (0402 Case Size) RDS(on) Drain-to-Source On Resistance VGS = –2.5 V 250 m Ω – 1.0 mm × 0.6 mm VGS = –4.5 V 150 m Ω • Ultra-Low Profile VGS(th) Threshold Voltage –0.95 V – 0.35 mm Max Height • Integrated ESD Protection Diode . Ordering Information – Rated > 4 kV HBM Device Qty Media Package Ship – Rated > 2 kV CDM CSD23381F4 3000 Femto(0402) 7-Inch Tape and • Lead and Halogen Free 1.0 mm x 0.6 mm Reel Reel CSD23381F4T 250 Land Grid Array (LGA) • RoHS Compliant . 2 Applications Absolute Maximum Ratings • Optimized for Load Switch Applications TA = 25°C VALUE UNIT • Optimized for General Purpose Switching VDS Drain-to-Source Voltage –12 V Applications VGS Gate-to-Source Voltage –8 V • Battery Applications ID Continuous Drain Current(1) –2.3 A IDM Pulsed Drain Current(2) –9 A • Handheld and Mobile Applications Continuous Gate Clamp Current –35 IG mA Pulsed Gate Clamp Current(2) –350 3 Description PD Power Dissipation(1) 500 mW This 150 m Ω, 12 V P-Channel FemtoFET™ MOSFET Human Body Model (HBM) 4 kV is designed and optimized to minimize the footprint in ESD Rating many handheld and mobile applications. This Charged Device Model (CDM) 2 kV technology is capable of replacing standard small TJ, Operating Junction and –55 to 150 °C TSTG Storage Temperature Range signal MOSFETs while providing at least a 60% reduction in footprint size. (1) Typical RθJA = 85°C/W on 1-inch 2 (6.45-cm2), 2-oz. (0.071- mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB. . (2) Pulse duration ≤ 300 μs, duty cycle ≤ 2% Typical Part Dimensions Top View . 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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