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DS1642 Datasheet(PDF) 4 Page - Dallas Semiconductor |
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DS1642 Datasheet(HTML) 4 Page - Dallas Semiconductor |
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4 / 11 page ![]() DS1642 4 of 11 RETRIEVING DATA FROM RAM OR CLOCK The DS1642 is in the read mode whenever WE (write enable) is high, and CE (chip enable) is low. The device architecture allows ripple–through access to any of the address locations in the NV SRAM. Valid data will be available at the DQ pins within tAA after the last address input is stable, providing that the CE and OE access times and states are satisfied. If CE or OE access times are not met, valid data will be available at the latter of chip enable access (tCEA) or at output enable access time (tOEA). The state of the data input/output pins (DQ) is controlled by CE and OE . If the outputs are activated before tAA, the data lines are driven to an intermediate state until tAA. If the address inputs are changed while CE and OE remain valid, output data will remain valid for output data hold time (tOH) but will then go indeterminate until the next address access. WRITING DATA TO RAM OR CLOCK The DS1642 is in the write mode whenever WE and CE are in their active state. The start of a write is referenced to the latter occurring transition of WE or CE . The addresses must be held valid throughout the cycle. CE or WE must return inactive for a minimum of tWR prior to the initiation of another read or write cycle. Data in must be valid tDS prior to the end of write and remain valid for tDH afterward. In a typical application, the OE signal will be high during a write cycle. However, OE can be active provided that care is taken with the data bus to avoid bus contention. If OE is low prior to WE transitioning low the data bus can become active with read data defined by the address inputs. A low transition on WE will then disable the outputs tWEZ after WE goes active. DATA RETENTION MODE When VCC is within nominal limits (VCC > 4.5 volts) the DS1642 can be accessed as described above by read or write cycles. However, when VCC is below the power-fail point VPF (point at which write protection occurs) the internal clock registers and RAM is blocked from access. This is accomplished internally by inhibiting access via the CE signal. When VCC falls below the level of the internal battery supply, power input is switched from the VCC pin to the internal battery and clock activity, RAM, and clock data are maintained from the battery until VCC is returned to nominal level. BATTERY LONGEVITY The DS1642 has a lithium power source that is designed to provide energy for clock activity, and clock and RAM data retention when the VCC supply is not present. The capability of this internal power supply is sufficient to power the DS1642 continuously for the life of the equipment in which it is installed. For specification purposes, the life expectancy is 10 years at 25 °C with the internal clock oscillator running in the absence of VCC power. Each DS1642 is shipped from Dallas Semiconductor with its lithium energy source disconnected, guaranteeing full energy capacity. When VCC is first applied at a level greater than VPF, the lithium energy source is enabled for battery backup operation. Actual life expectancy of the DS1642 will be much longer than 10 years since no lithium battery energy is consumed when VCC is present. |
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