1/2

G

Description

Schottky Diode .

Package Dimensions

Style : Pin 1.Anode 2.Cathode 3.Common Connection

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

1.90 REF.

B

2.40

2.80

H

1.00

1.30

C

1.40

1.60

K

0.10

0.20

D

0.35

0.50

J

0.40

-

E

0

0.10

L

0.85

1.15

F

0.45

0.55

M

0 C

10 C

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Peak forward current

200

mA

Recurrent Peak Reverse Voltage

30

V

RMS Voltage

21

V

DC Blocking Voltage

30

V

Average Forward Rectified Current

Io

100

mA

Peak Forward Surge Current at 1

Sec

600

mA

Typical Junction Capacitance between Terminal(note 1)

10

pF

Reverse Recovery Time(Note 2)

5.0

nSec

Operating Temperature Range

+150

Storage Temperature

Tstg

-55 ~ +150

Total Power Dissipation at Ta = 25 :

PD

150

mW

Characteristics at Ta = 25 ::::

characteristics

Symbol

Min

Max.

Unit

Test Conditions

Maximum Instantaneous Forward Voltage

VF

-

1000

mV

IF=100mA

Maximum Average Reverse Current

IR

-

2.0

uA

VR=25V

Note: 1.Measured at 1.0 MHz and applied reverse voltage of 1.0 volts.

2.Measured at applied forward current of 10 mA and reverse current of 10 mA.

3.ESD sensitive product handling required.

Characteristics Curve