GSBAS40 datasheet(1/2 Pages) ETL

Part #	GSBAS40

Description	S U R FA C E MO U N T, S C HO T T K Y B A R R I E R D I O D E V O LTAG E 4 0 V, C U R R E N T 0 . 2 A

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Manufacturer	ETL [E-Tech Electronics LTD]

Direct Link	http://e-tech.com.hk

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CORPORATION

GSBAS40

Page: 1/2

ISSUED DATE :2005/12/20

REVISED DATE :

G

G S

S B

B A

AS

S 4400 tth

h rru

u G

G S

S B

B A

A S

S 4400--0066

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O L T A G E 4 0 V, C U R R E N T 0 . 2 A

Description

These schottky barrier diodes are designed for high speed switching applications, circuit protection and voltage

clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is

excellent for hand held and portable applications where space is limited.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BCS.

Absolute Maximum Ratings at TA = 25 ::::

Parameter

Symbol

Ratings

Unit

Operating Junction Temperature

Tj

-55 ~ +125

:

Storage Temperature

Tstg

-55 ~ +150

:

Maximum Repetitive Peak Reverse Voltage

VRRM

40

V

Thermal Resistance Junction to Ambient Air

R JA

445

: /W

Peak Forward Surge Current at tp < 1.0s

IFSM

0.6

A

Maximum Average Forward Rectified Current

Io

0.2

A

Total Power Dissipation

PD

225

mW

Electrical Characteristics (at TA = 25 : unless otherwise noted)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

V(BR)R

40

-

V

IR=10 A

-

380

IF1=1mA

Forward Voltage(tp < 300uS)

VF

-

1000

mV

IF2=40mA

Reverse Leakage Current

IR

-

200

nA

VR=30V

Total Capacitance

CT

-

5.0

pF

VR=0V, f=1MHz

Reverse Recover Time

Trr

-

5.0

ns

IF=IR=10mA, RL=100 , Irr=1mA

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