ST12N10D datasheet(1/6 Pages) STANSON

Part #	ST12N10D

Description	N Channel Enhancement Mode MOSFET

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Manufacturer	STANSON [Stanson Technology]

Direct Link	http://www.stansontech.com

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ST12N10D

N Channel Enhancement Mode MOSFET

12.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST12N10D 2009. V1

DESCRIPTION

ST12N10D is the N-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. The ST12N10D

has been designed specially to improve the overall efficiency of DC/DC converters

using either synchronous or conventional switching PWM controllers. It has been

optimized for low gate charge, low RDS(ON) and fast switching speed.

PIN CONFIGURATION (D-PAK)

TO-252

PART MARKING

Y: Year Code

A: Produce Code

O: Process Code

FEATURE

100V/12.0A, RDS(ON) = 170mΩ(Typ.)

@VGS = 10V

Super high density cell design for

extremely low RDS(ON)

Exceptional on-resistance and

maximum DC current capability

TO-252 Package design

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